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Richard A Jones

Department of Chemistry


Phone: 512-471-1706

Office Location
WEL 4.414

Postal Address
105 E 24TH ST
AUSTIN, TX 78712

DIC, Imperial College of Science and Technology, UK (1978)
Ph.D., Imperial College London, UK (1978)
B.S., ARCS (1976)

Research interests encompass synthesis, structure and bonding in the organometallic and coordination chemistry of both d- and f-block (transition metal) and s- and p block (main group) elements. Current research efforts are aimed at the development of various applications of inorganic chemistry.

Lanthanide compounds are of considerable interest due to their potential applications in biology, medicine and materials science. We are interested in several areas of lanthanide chemistry. Of particular interest are compounds with useful photophysical properties. For example the near infra-red (NIR) properties of Yb(III), Nd(III) and Er(III) are of interest for use in bioassays and laser systems. Since f-f transitions are parity forbidden suitable chromophores can be used which act as antennas or sensitizers, transferring energy indirectly to the lanthanide ion, and resulting in high absorption coefficients.

High nuclearity lanthanide complexes and systems which exhibit supramolecular frameworks of lanthanides are other areas of current interest. We have recently found that certain lanthanide complexes can have extended 3D frameworks which contain pores or cavities which are capable of entrapping small organic molecules. Specific design of these kinds of materials allows for the control over useful and/or interesting properties (e.g. magnetic, electronic, optic, host guest etc). Materials which contain cavities and pores are also potentially useful for applications in separations, storage and catalysis.

Materials. In the past we have explored the fundamental chemistry of precursors to useful electronic materials such as GaAs, InP, TiN GaN etc. We are now actively engaged in the design and development of new precursors for the atomic layer deposition (ALD) of high purity thin films of transition metals such as Co, Ni, Re and Ru. There are many important applications of these materials in the microelectronics industry.